| PART |
Description |
Maker |
| CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
|
Cree, Inc.
|
| T2G6001528-Q3 |
18W, 28V, DC 6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| D2084UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(100W-28V-900MHz)(镀金多用DMOS射频硅场效应100W-28V-900MHz)) 金镀金属多功能硅的DMOS射频场效应管（功100W - 28V 900MHz时）（镀金多用的DMOS射频硅场效应管（功率100W - 28V 900MHz的）
TetraFET 100W - 28V - 900MHz
|
Sanyo Electric Co., Ltd.
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| HMC409LP4 |
3300 MHz - 3800 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
HITTITE MICROWAVE CORP
|
| D1053 D1053UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(50W-28V-1GHz,Push-Pull)(镀金多用DMOS射频硅场效应50W-28V-1GHz,推挽) 金镀金属多功能硅的DMOS射频场效应管50 28V 1GHz的，推挽式）（镀金多用的DMOS射频硅场效应管（50 28V 1GHz的，推挽式）
METAL GATE RF SILICON FET
|
3M Company
SEME-LAB[Seme LAB]
|
| CMPA0060025F CMPA0060025F-AMP CMPA0060025F-TB |
25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier
|
Cree, Inc
|
| MAAM-007866-0P1R00 MAAM-007866-0P1RA1 MAAM-007866- |
Broadband Driver Amplifier 50 to 3300 MHz
|
M/A-COM Technology Solutions, Inc.
|
| D1023UK D1023 |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(60W-28V-175MHz,Single Ended)(镀金多用DMOS射频硅场效应60W-28V-500MHz,单端) 金镀金属多功能硅的DMOS射频场效应管0 28V 175MHz时，单端）（镀金多用的DMOS射频硅场效应管（60 28V的，500MHz的单端式））
|
SEME-LAB[Seme LAB]
TT electronics Semelab Limited
Microsemi, Corp.
|
| SKY73012-11 |
SKY73012 400 ?3900 MHz Direct Quadrature Demodulator
TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT, QCC32
|
Skyworks Solutions Inc.
|
| BLS6G2933P-200 |
LDMOS S-Band radar pallet amplifier 2900 MHz - 3300 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
NXP Semiconductors N.V.
|
| PEH626HAC4390M10 PEH626HBB4390M08 PEH626KBD4390M08 |
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 25 V, 3900 uF, THROUGH HOLE MOUNT RADIAL LEADED, ROHS COMPLIANT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 40 V, 3900 uF, THROUGH HOLE MOUNT RADIAL LEADED, ROHS COMPLIANT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 40 V, 3300 uF, THROUGH HOLE MOUNT RADIAL LEADED, ROHS COMPLIANT
|
KEMET, Corp.
|
| QPD1004 QPD1004EVB1 QPD1004S2 QPD1004SQ QPD1004SR |
25W, 50V, 30 ?1200 MHz, GaN RF Input-Matched Transistor
|
TriQuint Semiconductor
|
|
